Ni ohmic contacts to n-type Ge1−x−ySixSny using phosphorous implant and segregation

Ni ohmic contacts to n-type Ge1−x−ySixSny using phosphorous implant and segregation

N-type Ge1−x−ySixSny ternary alloy was successfully grown by the Sb in situ doping technique through sputter epitaxy method. A study comparing the electrical contact characteristic of n- Ge1−x−ySixSny with and without phosphorous implantation was performed. Ohmic contacts to n-type Ge1−x−ySixSny are...

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Bibliographic Details
Main Authors: Suyuan Wang, Jun Zheng, Chunlai Xue, Chuanbo Li, Yuhua Zuo, Buwen Cheng, Qiming Wang
Format: Article
Language:English
Published: AIP Publishing LLC 2015-12-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4939588

Internet

http://dx.doi.org/10.1063/1.4939588

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