Ni ohmic contacts to n-type Ge1−x−ySixSny using phosphorous implant and segregation
N-type Ge1−x−ySixSny ternary alloy was successfully grown by the Sb in situ doping technique through sputter epitaxy method. A study comparing the electrical contact characteristic of n- Ge1−x−ySixSny with and without phosphorous implantation was performed. Ohmic contacts to n-type Ge1−x−ySixSny are...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4939588 |
| Summary: | N-type Ge1−x−ySixSny ternary alloy was successfully grown by the Sb in situ doping technique through sputter epitaxy method. A study comparing the electrical contact characteristic of n- Ge1−x−ySixSny with and without phosphorous implantation was performed. Ohmic contacts to n-type Ge1−x−ySixSny are realized by shallow P implant and Ni(Ge1−x−ySixSny) formation after rapid thermal annealing at 400 °C. It is proposed that the ohmic behavior is mainly attributed to the phosphorous segregation effect confirmed by secondary ion mass spectroscopy. |
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| ISSN: | 2158-3226 |