Ni ohmic contacts to n-type Ge1−x−ySixSny using phosphorous implant and segregation
N-type Ge1−x−ySixSny ternary alloy was successfully grown by the Sb in situ doping technique through sputter epitaxy method. A study comparing the electrical contact characteristic of n- Ge1−x−ySixSny with and without phosphorous implantation was performed. Ohmic contacts to n-type Ge1−x−ySixSny are...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-12-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4939588 |
| _version_ | 1818013978075332608 |
|---|---|
| author | Suyuan Wang Jun Zheng Chunlai Xue Chuanbo Li Yuhua Zuo Buwen Cheng Qiming Wang |
| author_facet | Suyuan Wang Jun Zheng Chunlai Xue Chuanbo Li Yuhua Zuo Buwen Cheng Qiming Wang |
| author_sort | Suyuan Wang |
| collection | DOAJ |
| description | N-type Ge1−x−ySixSny ternary alloy was successfully grown by the Sb in situ doping technique through sputter epitaxy method. A study comparing the electrical contact characteristic of n- Ge1−x−ySixSny with and without phosphorous implantation was performed. Ohmic contacts to n-type Ge1−x−ySixSny are realized by shallow P implant and Ni(Ge1−x−ySixSny) formation after rapid thermal annealing at 400 °C. It is proposed that the ohmic behavior is mainly attributed to the phosphorous segregation effect confirmed by secondary ion mass spectroscopy. |
| first_indexed | 2024-04-14T06:39:56Z |
| format | Article |
| id | doaj.art-297abd15df784831afbb821a24d02d4b |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-04-14T06:39:56Z |
| publishDate | 2015-12-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-297abd15df784831afbb821a24d02d4b2022-12-22T02:07:21ZengAIP Publishing LLCAIP Advances2158-32262015-12-01512127241127241-610.1063/1.4939588086512ADVNi ohmic contacts to n-type Ge1−x−ySixSny using phosphorous implant and segregationSuyuan Wang0Jun Zheng1Chunlai Xue2Chuanbo Li3Yuhua Zuo4Buwen Cheng5Qiming Wang6State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaState Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaState Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaState Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaState Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaState Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaState Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaN-type Ge1−x−ySixSny ternary alloy was successfully grown by the Sb in situ doping technique through sputter epitaxy method. A study comparing the electrical contact characteristic of n- Ge1−x−ySixSny with and without phosphorous implantation was performed. Ohmic contacts to n-type Ge1−x−ySixSny are realized by shallow P implant and Ni(Ge1−x−ySixSny) formation after rapid thermal annealing at 400 °C. It is proposed that the ohmic behavior is mainly attributed to the phosphorous segregation effect confirmed by secondary ion mass spectroscopy.http://dx.doi.org/10.1063/1.4939588 |
| spellingShingle | Suyuan Wang Jun Zheng Chunlai Xue Chuanbo Li Yuhua Zuo Buwen Cheng Qiming Wang Ni ohmic contacts to n-type Ge1−x−ySixSny using phosphorous implant and segregation AIP Advances |
| title | Ni ohmic contacts to n-type Ge1−x−ySixSny using phosphorous implant and segregation |
| title_full | Ni ohmic contacts to n-type Ge1−x−ySixSny using phosphorous implant and segregation |
| title_fullStr | Ni ohmic contacts to n-type Ge1−x−ySixSny using phosphorous implant and segregation |
| title_full_unstemmed | Ni ohmic contacts to n-type Ge1−x−ySixSny using phosphorous implant and segregation |
| title_short | Ni ohmic contacts to n-type Ge1−x−ySixSny using phosphorous implant and segregation |
| title_sort | ni ohmic contacts to n type ge1 x ysixsny using phosphorous implant and segregation |
| url | http://dx.doi.org/10.1063/1.4939588 |
| work_keys_str_mv | AT suyuanwang niohmiccontactstontypege1xysixsnyusingphosphorousimplantandsegregation AT junzheng niohmiccontactstontypege1xysixsnyusingphosphorousimplantandsegregation AT chunlaixue niohmiccontactstontypege1xysixsnyusingphosphorousimplantandsegregation AT chuanboli niohmiccontactstontypege1xysixsnyusingphosphorousimplantandsegregation AT yuhuazuo niohmiccontactstontypege1xysixsnyusingphosphorousimplantandsegregation AT buwencheng niohmiccontactstontypege1xysixsnyusingphosphorousimplantandsegregation AT qimingwang niohmiccontactstontypege1xysixsnyusingphosphorousimplantandsegregation |