Improvement of β-SiC Synthesis Technology on Silicon Substrate

Improvement of β-SiC Synthesis Technology on Silicon Substrate

This article presents an enhanced method for synthesizing β-SiC on a silicon substrate, utilizing porous silicon as a buffer layer, followed by thermal carbide formation. This approach ensured strong adhesion of the SiC film to the substrate, facilitating the creation of a hybrid hetero-structure of...

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Bibliographic Details
Main Authors: Yana Suchikova, Sergii Kovachov, Ihor Bohdanov, Artem L. Kozlovskiy, Maxim V. Zdorovets, Anatoli I. Popov
Format: Article
Language:English
Published: MDPI AG 2023-10-01
Series:Technologies
Subjects:
silicon carbide
silicon
electrochemical etching
solar cells
carbonization
annealing
Online Access:https://www.mdpi.com/2227-7080/11/6/152

Internet

https://www.mdpi.com/2227-7080/11/6/152

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