Improvement of β-SiC Synthesis Technology on Silicon Substrate
This article presents an enhanced method for synthesizing β-SiC on a silicon substrate, utilizing porous silicon as a buffer layer, followed by thermal carbide formation. This approach ensured strong adhesion of the SiC film to the substrate, facilitating the creation of a hybrid hetero-structure of...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-10-01
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| Series: | Technologies |
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| Online Access: | https://www.mdpi.com/2227-7080/11/6/152 |
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| author | Yana Suchikova Sergii Kovachov Ihor Bohdanov Artem L. Kozlovskiy Maxim V. Zdorovets Anatoli I. Popov |
| author_facet | Yana Suchikova Sergii Kovachov Ihor Bohdanov Artem L. Kozlovskiy Maxim V. Zdorovets Anatoli I. Popov |
| author_sort | Yana Suchikova |
| collection | DOAJ |
| description | This article presents an enhanced method for synthesizing β-SiC on a silicon substrate, utilizing porous silicon as a buffer layer, followed by thermal carbide formation. This approach ensured strong adhesion of the SiC film to the substrate, facilitating the creation of a hybrid hetero-structure of SiC/por-Si/mono-Si. The surface morphology of the SiC film revealed islands measuring 2–6 μm in diameter, with detected micropores that were 70–80 nm in size. An XRD analysis confirmed the presence of spectra from crystalline silicon and crystalline silicon carbide in cubic symmetry. The observed shift in spectra to the low-frequency zone indicated the formation of nanostructures, correlating with our SEM analysis results. These research outcomes present prospects for the further utilization and optimization of β-SiC synthesis technology for electronic device development. |
| first_indexed | 2024-03-08T20:18:54Z |
| format | Article |
| id | doaj.art-29aa72cb00b24efd84c1d2c7d27f795a |
| institution | Directory Open Access Journal |
| issn | 2227-7080 |
| language | English |
| last_indexed | 2024-03-08T20:18:54Z |
| publishDate | 2023-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Technologies |
| spelling | doaj.art-29aa72cb00b24efd84c1d2c7d27f795a2023-12-22T14:45:34ZengMDPI AGTechnologies2227-70802023-10-0111615210.3390/technologies11060152Improvement of β-SiC Synthesis Technology on Silicon SubstrateYana Suchikova0Sergii Kovachov1Ihor Bohdanov2Artem L. Kozlovskiy3Maxim V. Zdorovets4Anatoli I. Popov5The Department of Physics and Methods of Teaching Physics, Berdyansk State Pedagogical University, 71100 Berdyansk, UkraineThe Department of Physics and Methods of Teaching Physics, Berdyansk State Pedagogical University, 71100 Berdyansk, UkraineThe Department of Physics and Methods of Teaching Physics, Berdyansk State Pedagogical University, 71100 Berdyansk, UkraineEngineering Profile Laboratory, L.N. Gumilyov Eurasian National University, Satpaev Str. 5, Astana 010008, KazakhstanEngineering Profile Laboratory, L.N. Gumilyov Eurasian National University, Satpaev Str. 5, Astana 010008, KazakhstanEngineering Profile Laboratory, L.N. Gumilyov Eurasian National University, Satpaev Str. 5, Astana 010008, KazakhstanThis article presents an enhanced method for synthesizing β-SiC on a silicon substrate, utilizing porous silicon as a buffer layer, followed by thermal carbide formation. This approach ensured strong adhesion of the SiC film to the substrate, facilitating the creation of a hybrid hetero-structure of SiC/por-Si/mono-Si. The surface morphology of the SiC film revealed islands measuring 2–6 μm in diameter, with detected micropores that were 70–80 nm in size. An XRD analysis confirmed the presence of spectra from crystalline silicon and crystalline silicon carbide in cubic symmetry. The observed shift in spectra to the low-frequency zone indicated the formation of nanostructures, correlating with our SEM analysis results. These research outcomes present prospects for the further utilization and optimization of β-SiC synthesis technology for electronic device development.https://www.mdpi.com/2227-7080/11/6/152silicon carbidesiliconelectrochemical etchingsolar cellscarbonizationannealing |
| spellingShingle | Yana Suchikova Sergii Kovachov Ihor Bohdanov Artem L. Kozlovskiy Maxim V. Zdorovets Anatoli I. Popov Improvement of β-SiC Synthesis Technology on Silicon Substrate Technologies silicon carbide silicon electrochemical etching solar cells carbonization annealing |
| title | Improvement of β-SiC Synthesis Technology on Silicon Substrate |
| title_full | Improvement of β-SiC Synthesis Technology on Silicon Substrate |
| title_fullStr | Improvement of β-SiC Synthesis Technology on Silicon Substrate |
| title_full_unstemmed | Improvement of β-SiC Synthesis Technology on Silicon Substrate |
| title_short | Improvement of β-SiC Synthesis Technology on Silicon Substrate |
| title_sort | improvement of β sic synthesis technology on silicon substrate |
| topic | silicon carbide silicon electrochemical etching solar cells carbonization annealing |
| url | https://www.mdpi.com/2227-7080/11/6/152 |
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