Improvement of β-SiC Synthesis Technology on Silicon Substrate

Improvement of β-SiC Synthesis Technology on Silicon Substrate

This article presents an enhanced method for synthesizing β-SiC on a silicon substrate, utilizing porous silicon as a buffer layer, followed by thermal carbide formation. This approach ensured strong adhesion of the SiC film to the substrate, facilitating the creation of a hybrid hetero-structure of...

Full description

Bibliographic Details
Main Authors:	Yana Suchikova, Sergii Kovachov, Ihor Bohdanov, Artem L. Kozlovskiy, Maxim V. Zdorovets, Anatoli I. Popov
Format:	Article
Language:	English
Published:	MDPI AG 2023-10-01
Series:	Technologies
Subjects:	silicon carbide silicon electrochemical etching solar cells carbonization annealing
Online Access:	https://www.mdpi.com/2227-7080/11/6/152

Similar Items

The Synthesis of porous indium phosphide with nickel oxide crystallites on the surface
by: Yana Suchikova, et al.
Published: (2022-07-01)

Formation of SiC by Vacuum Carbidization on Porous Silicon
by: M. V. Labanok, et al.
Published: (2022-10-01)

Electrochemical Growth and Structural Study of the Al<sub>x</sub>Ga<sub>1−x</sub>As Nanowhisker Layer on the GaAs Surface
by: Yana Suchikova, et al.
Published: (2023-08-01)

Formation of CdO/CdS/textured-ZnO/ZnO heterostructures by chemical deposition
by: Yana Suchikova, et al.
Published: (2022-06-01)

INFLUENCE OF SILICON WAFER CRYSTALLOGRAPHIC ORIENTATION ON ANODIZATION MECHANISM
by: N. L. Grevtsov, et al.
Published: (2020-03-01)

Slicing of 4H‐SiC Wafers Combining Ultrafast Laser Irradiation and Bandgap‐Selective Photo‐Electrochemical Exfoliation
by: Wenhao Geng, et al.
Published: (2023-07-01)

Silicon and Silicon Carbide Recrystallization by Laser Annealing: A Review
by: Daniele Arduino, et al.
Published: (2023-12-01)

SiC materials and devices /
by: 378239 Shur, Michael, et al.
Published: (2007)

Study on Performance of Silicon Ignitiors based on Energetic Chip of Porous Silicon
by: Liu Lan, et al.
Published: (2017-01-01)

Study of the Effect of Nitric Acid in Electrochemically Synthesized Silicon Nanocrystals: Tunability of Bright and Uniform Photoluminescence
by: Alfredo Morales-Sánchez, et al.
Published: (2022-06-01)

The Photoluminescence Characteristics of Partially and Fully (P-N) Porous Silicon
by: Alwan M. Alwan, et al.
Published: (2013-03-01)

Effects of particle grading composition of SiC on properties of silicon-bonded SiC porous ceramics
by: Changzhi Zhao, et al.
Published: (2022-01-01)

Si3N4/SiC nanocomposite powder from a preceramic polymeric network based on poly(methylsilane) as the SiC precursor
by: Maurício F. Gozzi, et al.
Published: (2001-01-01)

Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review
by: Guo Li, et al.
Published: (2023-07-01)

Features of formation of composite ceramics from SiC-Si-Mo at high pressure
by: Vlasova M., et al.
Published: (2009-01-01)

Silicon carbide and related materials 2008 : selected, peer reviewed papers from the 7th European conference on silicon carbide and related materials, September 7-11, Barcelona, Spain /
by: European Conference on Silicon Carbide and Related Materials (7th : 2008 : Barcelona, Spain), et al.
Published: (2009)

Forming of 4НSiC p–i–n-diodes mesastructures by the ion-plasmous etching method
by: Boltovets M. S., et al.
Published: (2009-10-01)

Advanced Synthesis and Characterization of CdO/CdS/ZnO Heterostructures for Solar Energy Applications
by: Yana Suchikova, et al.
Published: (2024-03-01)

RESEARCH ON SiC FOR INTERFACE QUALITY
by: Cristiana VOICAN, et al.
Published: (2013-05-01)

Mechanoactivation of chromium silicide formation in the SiC-Cr-Si system
by: Vlasova M., et al.
Published: (2002-01-01)

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007 /
by: International Conference on Silicon Carbide and Related Materials (12th : 2007 : Otsu-shi, Japan), et al.
Published: (c200)

Study of Characteristics of Porous Silicon by Electrochemical Etching
by: Hasan Hadi Hussein
Published: (2013-01-01)

Low-temperature PECVD of nanodevice-grade nc-3C-SiC/
by: 496526 Cheng, Qijin, et al.

Novel Method for Electroless Etching of 6H–SiC
by: Gyula Károlyházy, et al.
Published: (2020-03-01)

Fabrication of ZrC/SiC, ZrO2/SiC and ZrO2 powders by carbothermal reduction of ZrSiO4
by: Ljiljana Kljajević, et al.
Published: (2011-06-01)

The Structure and Electrical Properties of Porous Silicon Prepared by Electrochemical Etching
by: Narges Zamil Abdulzahra
Published: (2011-10-01)

Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009 /
by: International Conference on Silicon Carbide and Related Materials (13th : 2009 :, et al.
Published: (c201)

Kajian sifat optik dan fotoluminesens pada saput tipis Silikon Karbida (SiC) /
by: 258900 Lau, Chen Chen, et al.
Published: (2003)

Electrical discharge machining of siliconized silicon carbide using copper electrode /
by: Abdul Azeez Abdu Aliyu, 1980-, et al.
Published: (2014)

Preparation and Characterization of Pure SiC Ceramics by HTPVT Induced by Seeding with SiC Nanoarrays
by: Yu-Chen Deng, et al.
Published: (2021-10-01)

Studying the Effect of Different Etching Parameters on the Physical Properties of Porous Silicon Prepared By Electrochemical Etching
by: Haider Amer Khalaf, et al.
Published: (2015-10-01)

Electrical discharge machining of siliconized silicon carbide using copper electrode [electronic resource] /
by: Abdul Azeez Abdu Aliyu, 1980-
Published: (2014)

Silicon carbide /
by: 269121 Frantsevich, I. N., et al.
Published: (1970)

Study of Atmospheric Pressure Plasma Temperature Based on Silicon Carbide Etching
by: Shaozhen Xu, et al.
Published: (2023-05-01)

Silicon carbide '87 /
by: Silicon Carbide Symposium (1987 : Columbus, Ohio), et al.
Published: (c198)

Zero-Field ODMR and relaxation of Si-vacancy centers in 6H-SiC
by: Harpreet Singh, et al.
Published: (2023-01-01)

Silicon carbide devices and technology /
by: Fraley, Bill
Published: (2015)

Fabrication of SiC-on-Insulator (SiCOI) Layers by Chemical Vapor Deposition of 3C-SiC on Si-in-Insulator Substrates at Low Deposition Temperatures of 1120 °C
by: Johannes Steiner, et al.
Published: (2023-11-01)

Enhancement of Porous Silicon Formation by Using Ultrasonic Vibrations
by: Ali H. Al-Hamdani
Published: (2012-03-01)

Fabrication and characterization of porous silicon for humidity sensor application
by: Uday M. Nayef
Published: (2019-01-01)