Stochastic dynamics of resistive switching: fluctuations lead to optimal particle number
Resistive switching (RS) is one of the foremost candidates for building novel types of non-volatile random access memories. Any practical implementation of such a memory cell calls for a strong miniaturization, at which point fluctuations start playing a role that cannot be neglected. A detailed und...
Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
IOP Publishing
2017-01-01
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Series: | New Journal of Physics |
Subjects: | |
Online Access: | https://doi.org/10.1088/1367-2630/aa818b |