Stochastic dynamics of resistive switching: fluctuations lead to optimal particle number

Resistive switching (RS) is one of the foremost candidates for building novel types of non-volatile random access memories. Any practical implementation of such a memory cell calls for a strong miniaturization, at which point fluctuations start playing a role that cannot be neglected. A detailed und...

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Bibliographic Details
Main Authors: Paul K Radtke, Andrew L Hazel, Arthur V Straube, Lutz Schimansky-Geier
Format: Article
Language:English
Published: IOP Publishing 2017-01-01
Series:New Journal of Physics
Subjects:
Online Access:https://doi.org/10.1088/1367-2630/aa818b