Stochastic dynamics of resistive switching: fluctuations lead to optimal particle number
Resistive switching (RS) is one of the foremost candidates for building novel types of non-volatile random access memories. Any practical implementation of such a memory cell calls for a strong miniaturization, at which point fluctuations start playing a role that cannot be neglected. A detailed und...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2017-01-01
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| Series: | New Journal of Physics |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/1367-2630/aa818b |
| _version_ | 1797750541188595712 |
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| author | Paul K Radtke Andrew L Hazel Arthur V Straube Lutz Schimansky-Geier |
| author_facet | Paul K Radtke Andrew L Hazel Arthur V Straube Lutz Schimansky-Geier |
| author_sort | Paul K Radtke |
| collection | DOAJ |
| description | Resistive switching (RS) is one of the foremost candidates for building novel types of non-volatile random access memories. Any practical implementation of such a memory cell calls for a strong miniaturization, at which point fluctuations start playing a role that cannot be neglected. A detailed understanding of switching mechanisms and reliability is essential. For this reason, we formulate a particle model based on the stochastic motion of oxygen vacancies. It allows us to investigate fluctuations in the resistance states of a switch with two active zones. The vacancies’ dynamics are governed by a master equation. Upon the application of a voltage pulse, the vacancies travel collectively through the switch. By deriving a generalized Burgers equation we can interpret this collective motion as nonlinear traveling waves, and numerically verify this result. Further, we define binary logical states by means of the underlying vacancy distributions, and establish a framework of writing and reading such memory element with voltage pulses. Considerations about the discriminability of these operations under fluctuations together with the markedness of the RS effect itself lead to the conclusion, that an intermediate vacancy number is optimal for performance. |
| first_indexed | 2024-03-12T16:34:14Z |
| format | Article |
| id | doaj.art-29b583dcc74744359a045934ff14a507 |
| institution | Directory Open Access Journal |
| issn | 1367-2630 |
| language | English |
| last_indexed | 2024-03-12T16:34:14Z |
| publishDate | 2017-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | New Journal of Physics |
| spelling | doaj.art-29b583dcc74744359a045934ff14a5072023-08-08T14:56:02ZengIOP PublishingNew Journal of Physics1367-26302017-01-0119909300710.1088/1367-2630/aa818bStochastic dynamics of resistive switching: fluctuations lead to optimal particle numberPaul K Radtke0Andrew L Hazel1Arthur V Straube2Lutz Schimansky-Geier3Department of Physics, Humboldt-Universität zu Berlin , Newtonstraße 15, D-12489 Berlin, GermanySchool of Mathematics and Manchester Centre for Nonlinear Dynamics, University of Manchester , Oxford Road, Manchester, M13 9PL, United KingdomDepartment of Mathematics and Computer Science , Freie Universität Berlin, Arnimalle 6, D-14195 Berlin, GermanyDepartment of Physics, Humboldt-Universität zu Berlin , Newtonstraße 15, D-12489 Berlin, GermanyResistive switching (RS) is one of the foremost candidates for building novel types of non-volatile random access memories. Any practical implementation of such a memory cell calls for a strong miniaturization, at which point fluctuations start playing a role that cannot be neglected. A detailed understanding of switching mechanisms and reliability is essential. For this reason, we formulate a particle model based on the stochastic motion of oxygen vacancies. It allows us to investigate fluctuations in the resistance states of a switch with two active zones. The vacancies’ dynamics are governed by a master equation. Upon the application of a voltage pulse, the vacancies travel collectively through the switch. By deriving a generalized Burgers equation we can interpret this collective motion as nonlinear traveling waves, and numerically verify this result. Further, we define binary logical states by means of the underlying vacancy distributions, and establish a framework of writing and reading such memory element with voltage pulses. Considerations about the discriminability of these operations under fluctuations together with the markedness of the RS effect itself lead to the conclusion, that an intermediate vacancy number is optimal for performance.https://doi.org/10.1088/1367-2630/aa818bresistive switchingfluctuationsmaster equationBurgers equationcomposite resistive switchoxygen vacancies |
| spellingShingle | Paul K Radtke Andrew L Hazel Arthur V Straube Lutz Schimansky-Geier Stochastic dynamics of resistive switching: fluctuations lead to optimal particle number New Journal of Physics resistive switching fluctuations master equation Burgers equation composite resistive switch oxygen vacancies |
| title | Stochastic dynamics of resistive switching: fluctuations lead to optimal particle number |
| title_full | Stochastic dynamics of resistive switching: fluctuations lead to optimal particle number |
| title_fullStr | Stochastic dynamics of resistive switching: fluctuations lead to optimal particle number |
| title_full_unstemmed | Stochastic dynamics of resistive switching: fluctuations lead to optimal particle number |
| title_short | Stochastic dynamics of resistive switching: fluctuations lead to optimal particle number |
| title_sort | stochastic dynamics of resistive switching fluctuations lead to optimal particle number |
| topic | resistive switching fluctuations master equation Burgers equation composite resistive switch oxygen vacancies |
| url | https://doi.org/10.1088/1367-2630/aa818b |
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