Investigation of V/III ratio dependencies for optimizing AlN growth during reduced parasitic reaction in metalorganic vapor phase epitaxy

Investigation of V/III ratio dependencies for optimizing AlN growth during reduced parasitic reaction in metalorganic vapor phase epitaxy

Abstract AlGaN-based ultraviolet (UV) light-emitting diodes (LEDs) are expected to have various applications, including sensing and printing, and light with ultraviolet-C (UVC) wavelengths has a virus inactivation effect. The metalorganic vapor phase epitaxy (MOVPE) method has been used to fabricate...

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Bibliographic Details
Main Authors: Atsushi Tomita, Takumi Miyagawa, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi, Kentaro Nagamatsu
Format: Article
Language:English
Published: Nature Portfolio 2023-02-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-023-30489-z

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https://doi.org/10.1038/s41598-023-30489-z

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