Flexible UV detectors based on in-situ hydrogen doped amorphous Ga2O3 with high photo-to-dark current ratio
Amorphous Ga _2 O _3 (a-Ga _2 O _3 ) has been attracting more and more attention due to its unique merits such as wide bandgap (∼4.9 eV), low growth temperature, large-scale uniformity, low cost and energy efficient, making it a powerful competitor in flexible deep ultraviolet (UV) photodetection. A...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2024-01-01
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| Series: | Materials Futures |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2752-5724/ad19e1 |