Novel 1064 nm DBR lasers combining active layer removal and surface gratings

Novel 1064 nm DBR lasers combining active layer removal and surface gratings

Abstract The fabrication and characterisation details of novel distributed Bragg reflector (DBR) diode lasers emitting around 1064 nm are presented here. The AlGaAs epitaxial layer stack used here allows the removal of the active quantum wells in passive sections where no current is injected. The DB...

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Bibliographic Details
Main Authors: O. Brox, H. Wenzel, J. Fricke, P. Della Casa, A. Maaßdorf, M. Matalla, S. Wenzel, A. Wicht, A. Knigge
Format: Article
Language:English
Published: Wiley 2021-07-01
Series:Electronics Letters
Subjects:
Lasing action in semiconductors
Design of specific laser systems
Laser beam characteristics and interactions
Gratings, echelles
Laser beam interactions and properties
Semiconductor lasers
Online Access:https://doi.org/10.1049/ell2.12192

Internet

https://doi.org/10.1049/ell2.12192

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