Current Transport Mechanism in Palladium Schottky Contact on Si-Based Freestanding GaN
In this study, the charge transport mechanism of Pd/Si-based FS-GaN Schottky diodes was investigated. A temperature-dependent current−voltage analysis revealed that the I-V characteristics of the diodes show a good rectifying behavior with a large ratio of 10<sup>3</sup>...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-02-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/10/2/297 |