Broadband Millimeter-Wave Front-End Module Design Considerations in FD-SOI CMOS vs. GaN HEMTs

Broadband Millimeter-Wave Front-End Module Design Considerations in FD-SOI CMOS vs. GaN HEMTs

Millimeter-wave (mm-Wave) phased array systems need to meet the transmitter (Tx) equivalent isotropic radiated power (EIRP) requirement, and that depends mainly on the design of two key sub-components: (1) the antenna array and (2) the Tx power amplifier (PA) in the front-end-modules (FEMs). Simulat...

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Bibliographic Details
Main Authors: Clint Sweeney, Donald Y. C. Lie, Jill C. Mayeda, Jerry Lopez
Format: Article
Language:English
Published: MDPI AG 2024-12-01
Series:Applied Sciences
Subjects:
fifth generation (5G)
6G
front-end module (FEM)
high-electron-mobility-transistor (HEMT)
half power beam width (HPBW)
millimeter wave (mm-Wave)
Online Access:https://www.mdpi.com/2076-3417/14/23/11429

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https://www.mdpi.com/2076-3417/14/23/11429

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