Dual-wafer intergrinding thinning by bipolar-discharge EDM with a capacity-coupled pulse generator considering large gap capacitance and minimization of discharge energy
The noncontact electrical discharge grinding technique has the potential to effectively grind thin, increasingly large-diameter wafers. This study proposes a bipolar electrical discharge machining (bipolar-EDM) method to realize the intergrinding of dual wafers, in which both wafers serve as the wor...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2022-09-01
|
| Series: | Results in Engineering |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590123022001967 |
| _version_ | 1811209728409206784 |
|---|---|
| author | Junming Guan Yonghua Zhao |
| author_facet | Junming Guan Yonghua Zhao |
| author_sort | Junming Guan |
| collection | DOAJ |
| description | The noncontact electrical discharge grinding technique has the potential to effectively grind thin, increasingly large-diameter wafers. This study proposes a bipolar electrical discharge machining (bipolar-EDM) method to realize the intergrinding of dual wafers, in which both wafers serve as the working electrode. A capacity-coupled (CC-type) pulse generator generates regular and identical bipolar discharges, ensuring symmetrical and stable removal of both wafers. Thus, both the energy efficiency and wafer thinning yield are doubled. The process characteristics are evaluated through equivalent circuit analysis and experiments, demonstrating that two thinned wafers exhibit high consistency in surface integrity and material removal rate (MRR). Moreover, the dual-wafer system causes an increase in the circuit resistance and gap capacitance, leading to a much lower discharge energy. This is beneficial for precision wafer grinding and thinning by electrical discharge machining (EDM) while keeping damage minimal. As a result, two Φ20 mm 4H–SiC wafers were thinned simultaneously with a maximum thinning rate of 3 μm/min. A mirror-like smooth surface (Ra < 80 nm) was obtained under finishing conditions, demonstrating its capability for precise wafer processing. |
| first_indexed | 2024-04-12T04:45:32Z |
| format | Article |
| id | doaj.art-2a33ec3644d444e6afc708072260f9e4 |
| institution | Directory Open Access Journal |
| issn | 2590-1230 |
| language | English |
| last_indexed | 2024-04-12T04:45:32Z |
| publishDate | 2022-09-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Engineering |
| spelling | doaj.art-2a33ec3644d444e6afc708072260f9e42022-12-22T03:47:31ZengElsevierResults in Engineering2590-12302022-09-0115100526Dual-wafer intergrinding thinning by bipolar-discharge EDM with a capacity-coupled pulse generator considering large gap capacitance and minimization of discharge energyJunming Guan0Yonghua Zhao1Department of Mechanical and Energy Engineering, Southern University of Science and Technology, Shenzhen, 518055, ChinaCorresponding author.; Department of Mechanical and Energy Engineering, Southern University of Science and Technology, Shenzhen, 518055, ChinaThe noncontact electrical discharge grinding technique has the potential to effectively grind thin, increasingly large-diameter wafers. This study proposes a bipolar electrical discharge machining (bipolar-EDM) method to realize the intergrinding of dual wafers, in which both wafers serve as the working electrode. A capacity-coupled (CC-type) pulse generator generates regular and identical bipolar discharges, ensuring symmetrical and stable removal of both wafers. Thus, both the energy efficiency and wafer thinning yield are doubled. The process characteristics are evaluated through equivalent circuit analysis and experiments, demonstrating that two thinned wafers exhibit high consistency in surface integrity and material removal rate (MRR). Moreover, the dual-wafer system causes an increase in the circuit resistance and gap capacitance, leading to a much lower discharge energy. This is beneficial for precision wafer grinding and thinning by electrical discharge machining (EDM) while keeping damage minimal. As a result, two Φ20 mm 4H–SiC wafers were thinned simultaneously with a maximum thinning rate of 3 μm/min. A mirror-like smooth surface (Ra < 80 nm) was obtained under finishing conditions, demonstrating its capability for precise wafer processing.http://www.sciencedirect.com/science/article/pii/S25901230220019674H–SiCWafer grinding/thinningBipolar electrical discharge machiningCapacity-coupled pulse generatorCircuit analysis |
| spellingShingle | Junming Guan Yonghua Zhao Dual-wafer intergrinding thinning by bipolar-discharge EDM with a capacity-coupled pulse generator considering large gap capacitance and minimization of discharge energy Results in Engineering 4H–SiC Wafer grinding/thinning Bipolar electrical discharge machining Capacity-coupled pulse generator Circuit analysis |
| title | Dual-wafer intergrinding thinning by bipolar-discharge EDM with a capacity-coupled pulse generator considering large gap capacitance and minimization of discharge energy |
| title_full | Dual-wafer intergrinding thinning by bipolar-discharge EDM with a capacity-coupled pulse generator considering large gap capacitance and minimization of discharge energy |
| title_fullStr | Dual-wafer intergrinding thinning by bipolar-discharge EDM with a capacity-coupled pulse generator considering large gap capacitance and minimization of discharge energy |
| title_full_unstemmed | Dual-wafer intergrinding thinning by bipolar-discharge EDM with a capacity-coupled pulse generator considering large gap capacitance and minimization of discharge energy |
| title_short | Dual-wafer intergrinding thinning by bipolar-discharge EDM with a capacity-coupled pulse generator considering large gap capacitance and minimization of discharge energy |
| title_sort | dual wafer intergrinding thinning by bipolar discharge edm with a capacity coupled pulse generator considering large gap capacitance and minimization of discharge energy |
| topic | 4H–SiC Wafer grinding/thinning Bipolar electrical discharge machining Capacity-coupled pulse generator Circuit analysis |
| url | http://www.sciencedirect.com/science/article/pii/S2590123022001967 |
| work_keys_str_mv | AT junmingguan dualwaferintergrindingthinningbybipolardischargeedmwithacapacitycoupledpulsegeneratorconsideringlargegapcapacitanceandminimizationofdischargeenergy AT yonghuazhao dualwaferintergrindingthinningbybipolardischargeedmwithacapacitycoupledpulsegeneratorconsideringlargegapcapacitanceandminimizationofdischargeenergy |