Reversible displacive transformation in MnTe polymorphic semiconductor
Designing low power consumption and fast operation electronic phase-change devices remains a challenge. Here, the authors demonstrate the reversible displacive transformation in polycrystalline MnTe films to enable resistive switching via fast Joule heating for fast nonvolatile memory applications.
| Auteurs principaux: | , , , , |
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| Format: | Article |
| Langue: | English |
| Publié: |
Nature Portfolio
2020-01-01
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| Collection: | Nature Communications |
| Accès en ligne: | https://doi.org/10.1038/s41467-019-13747-5 |