Electron Traps in GaAs Grown by Molecular Beam Epitaxy on On-axis (100) and Off-axis Substrates
Deep level transient spectroscopy (DLTS) was used to characterize the electron traps present in the bulkGaAs grown by molecular beam epitaxy (MBE) on on-axis (100) and off-axis (4° towards the (111) Adirection) substrates. Two electron traps were obtained for each sample having identical correspondi...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
University of the Philippines
2003-06-01
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| Series: | Science Diliman |
| Subjects: | |
| Online Access: | http://journals.upd.edu.ph/index.php/sciencediliman/article/view/125/116 |