Formation of radiation-disturbed layer in Al/SiO2/n-Si structures irradiated with helium ions with energy 5 MeV

Formation of radiation-disturbed layer in Al/SiO2/n-Si structures irradiated with helium ions with energy 5 MeV

This paper presents the change in the volt-farad characteristics of the Al/SiO2/n-Si structure irradiated with helium ions with the energy of 5 MeV in the frequencies of 1, 10, 100, and 1000 kHz. The voltage dependence of the capacitance and the frequency dependence of the dissolution angle are meas...

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Bibliographic Details
Main Authors: V. Q. Nha, L. V. Thang, H. T. Thuy Linh, N. I. Gorbachuk, N. X. Cuong
Format: Article
Language:English
Published: HUJOS 2020-08-01
Series:Tạp chí Khoa học Đại học Huế: Khoa học Tự nhiên
Subjects:
silicon dioxide
mos structures
irradiation
fluence
radiation-disturbed layer
Online Access:http://jos.hueuni.edu.vn/index.php/HUJOS-NS/article/view/5765

Internet

http://jos.hueuni.edu.vn/index.php/HUJOS-NS/article/view/5765

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