Formation of radiation-disturbed layer in Al/SiO2/n-Si structures irradiated with helium ions with energy 5 MeV
This paper presents the change in the volt-farad characteristics of the Al/SiO2/n-Si structure irradiated with helium ions with the energy of 5 MeV in the frequencies of 1, 10, 100, and 1000 kHz. The voltage dependence of the capacitance and the frequency dependence of the dissolution angle are meas...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
HUJOS
2020-08-01
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| Series: | Tạp chí Khoa học Đại học Huế: Khoa học Tự nhiên |
| Subjects: | |
| Online Access: | http://jos.hueuni.edu.vn/index.php/HUJOS-NS/article/view/5765 |