Infrared stimulated emission with an ultralow threshold from low-dislocation-density InN films grown on a vicinal GaN substrate

Infrared stimulated emission with an ultralow threshold from low-dislocation-density InN films grown on a vicinal GaN substrate

Near-infrared stimulated emission from a high-quality InN layer under optical pumping was observed with a threshold excitation power density of 0.3 and 4 kW cm−2 at T = 8 and 77 K, respectively. To achieve such a low threshold power density, vicinal GaN substrates were used to reduce the edge-compon...

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Bibliographic Details
Main Authors: Huapeng Liu, Bowen Sheng, Tao Wang, Konstantin Kudryavtsev, Artem Yablonskiy, Jiaqi Wei, Ali Imran, Zhaoying Chen, Ping Wang, Xiantong Zheng, Renchun Tao, Xuelin Yang, Fujun Xu, Weikun Ge, Bo Shen, Boris Andreev, Xinqiang Wang
Format: Article
Language:English
Published: KeAi Communications Co. Ltd. 2022-09-01
Series:Fundamental Research
Subjects:
InN
Stimulated emission
Vicinal substrate
Phonon replica
Molecular beam epitaxy
Online Access:http://www.sciencedirect.com/science/article/pii/S2667325821003010

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http://www.sciencedirect.com/science/article/pii/S2667325821003010

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