A Reliable Technology for Advanced SiC-MOS Devices Based on Fabrication of High Quality Silicon Oxide Layers by Converting a-Si
An alternative technological approach is proposed to obtain a SiO2 film on SiC using processes that finally reduce the effective fabrication costs. Accordingly, we report achieving of a high-quality oxide on 4H-SiC substrate using a process flow that consists in a preliminary deposition by sputterin...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8573870/ |