A novel self-biased pMOS clamped deep trench CSTBT with enhanced tradeoff and short-circuit capability

A novel self-biased pMOS clamped deep trench CSTBT with enhanced tradeoff and short-circuit capability

Abstract In this work, a novel deep trench CSTBT (DT-CSTBT) features emitter trench and the P-layer is proposed and investigated by simulation. The self-biased pMOS, comprising an emitter trench, N-CS layer, P-layer, and P-well, demonstrates an excellent clamping effect potential. The proposed DT-CS...

Cur síos iomlán

Sonraí bibleagrafaíochta
Príomhchruthaitheoirí: Jianbin Guo, Zhehong Qian, Xinru Chen, Hang Xu, Yafen Yang, David Wei Zhang
Formáid: Alt
Teanga:English
Foilsithe / Cruthaithe: Nature Portfolio 2025-01-01
Sraith:Scientific Reports
Ábhair:
CSTBT
Self-biased pMOS
Saturation current
Turn-off loss
Short-circuit safe operating area
Rochtain ar líne:https://doi.org/10.1038/s41598-025-85530-0

Ar líne

https://doi.org/10.1038/s41598-025-85530-0

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