Comparative study on the charge-trapping properties of TaAlO and ZrAlO high-k composites with designed band alignment

Comparative study on the charge-trapping properties of TaAlO and ZrAlO high-k composites with designed band alignment

The charge-trapping memory (CTM) structures Pt/Al2O3/TaAlO/Al2O3/p-Si and Pt/Al2O3/ZrAlO/Al2O3/p-Si were fabricated by using rf-sputtering and atomic layer deposition techniques, in which the potentials at the bottom of the conduction band (PBCB) of high-k composites TaAlO and ZrAlO were specially d...

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Bibliographic Details
Main Authors: W. Lu, C. Y. Wei, K. Jiang, J. Q. Liu, J. X. Lu, P. Han, A. D. Li, Y. D. Xia, B. Xu, J. Yin, Z. G. Liu
Format: Article
Language:English
Published: AIP Publishing LLC 2015-08-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4929521

Internet

http://dx.doi.org/10.1063/1.4929521

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