Thermal oxidation process on Si(113)-(3 × 2) investigated using high-temperature scanning tunneling microscopy

Thermal oxidation of Si(113) in a monolayer regime was investigated using high-temperature scanning tunneling microscopy (STM). Dynamic processes during thermal oxidation were examined in three oxidation modes – oxidation, etching, and transition modes – in the third of which both oxidation and etch...

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Bibliographic Details
Main Authors: Hiroya Tanaka, Shinya Ohno, Kazushi Miki, Masatoshi Tanaka
Format: Article
Language:English
Published: Beilstein-Institut 2022-02-01
Series:Beilstein Journal of Nanotechnology
Subjects:
Online Access:https://doi.org/10.3762/bjnano.13.12