Thermal oxidation process on Si(113)-(3 × 2) investigated using high-temperature scanning tunneling microscopy
Thermal oxidation of Si(113) in a monolayer regime was investigated using high-temperature scanning tunneling microscopy (STM). Dynamic processes during thermal oxidation were examined in three oxidation modes – oxidation, etching, and transition modes – in the third of which both oxidation and etch...
Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
Beilstein-Institut
2022-02-01
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Series: | Beilstein Journal of Nanotechnology |
Subjects: | |
Online Access: | https://doi.org/10.3762/bjnano.13.12 |