Heterostructure ReS2/GaAs Saturable Absorber Passively Q-Switched Nd:YVO4 Laser

Heterostructure ReS2/GaAs Saturable Absorber Passively Q-Switched Nd:YVO4 Laser

Abstract Heterostructure ReS2/GaAs was fabricated on a 110-μm (111) GaAs wafer by chemical vapor deposition method. Passively Q-switched Nd:YVO4 laser was demonstrated by employing heterostructure ReS2/GaAs as a saturable absorber (SA). The shortest pulse width of 51.3 ns with a repetition rate of 4...

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Bibliographic Details
Main Authors: Lijie Liu, Hongwei Chu, Xiaodong Zhang, Han Pan, Shengzhi Zhao, Dechun Li
Format: Article
Language:English
Published: SpringerOpen 2019-03-01
Series:Nanoscale Research Letters
Subjects:
Q-switching lasers
Two-dimensional nanomaterials
Saturable absorbers
Online Access:http://link.springer.com/article/10.1186/s11671-019-2953-7

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http://link.springer.com/article/10.1186/s11671-019-2953-7

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