Heterostructure ReS2/GaAs Saturable Absorber Passively Q-Switched Nd:YVO4 Laser
Abstract Heterostructure ReS2/GaAs was fabricated on a 110-μm (111) GaAs wafer by chemical vapor deposition method. Passively Q-switched Nd:YVO4 laser was demonstrated by employing heterostructure ReS2/GaAs as a saturable absorber (SA). The shortest pulse width of 51.3 ns with a repetition rate of 4...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2019-03-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-019-2953-7 |
| _version_ | 1797725654526984192 |
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| author | Lijie Liu Hongwei Chu Xiaodong Zhang Han Pan Shengzhi Zhao Dechun Li |
| author_facet | Lijie Liu Hongwei Chu Xiaodong Zhang Han Pan Shengzhi Zhao Dechun Li |
| author_sort | Lijie Liu |
| collection | DOAJ |
| description | Abstract Heterostructure ReS2/GaAs was fabricated on a 110-μm (111) GaAs wafer by chemical vapor deposition method. Passively Q-switched Nd:YVO4 laser was demonstrated by employing heterostructure ReS2/GaAs as a saturable absorber (SA). The shortest pulse width of 51.3 ns with a repetition rate of 452 kHz was obtained, corresponding to the pulse energy of 465 nJ and the peak power of 9.1 W. In comparison with the ReS2 Q-switched laser and the GaAs Q-switched laser, the heterostructer ReS2/GaAs Q-switched laser can generate shorter pulse duration and higher pulse energy. |
| first_indexed | 2024-03-12T10:34:23Z |
| format | Article |
| id | doaj.art-2b4b48d1d19a4b10a07c0ddb431a3fbc |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T10:34:23Z |
| publishDate | 2019-03-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-2b4b48d1d19a4b10a07c0ddb431a3fbc2023-09-02T08:58:11ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2019-03-011411610.1186/s11671-019-2953-7Heterostructure ReS2/GaAs Saturable Absorber Passively Q-Switched Nd:YVO4 LaserLijie Liu0Hongwei Chu1Xiaodong Zhang2Han Pan3Shengzhi Zhao4Dechun Li5School of Information Science and Engineering, Shandong UniversitySchool of Information Science and Engineering, Shandong UniversitySchool of Information Science and Engineering, Shandong UniversitySchool of Information Science and Engineering, Shandong UniversitySchool of Information Science and Engineering, Shandong UniversitySchool of Information Science and Engineering, Shandong UniversityAbstract Heterostructure ReS2/GaAs was fabricated on a 110-μm (111) GaAs wafer by chemical vapor deposition method. Passively Q-switched Nd:YVO4 laser was demonstrated by employing heterostructure ReS2/GaAs as a saturable absorber (SA). The shortest pulse width of 51.3 ns with a repetition rate of 452 kHz was obtained, corresponding to the pulse energy of 465 nJ and the peak power of 9.1 W. In comparison with the ReS2 Q-switched laser and the GaAs Q-switched laser, the heterostructer ReS2/GaAs Q-switched laser can generate shorter pulse duration and higher pulse energy.http://link.springer.com/article/10.1186/s11671-019-2953-7Q-switching lasersTwo-dimensional nanomaterialsSaturable absorbers |
| spellingShingle | Lijie Liu Hongwei Chu Xiaodong Zhang Han Pan Shengzhi Zhao Dechun Li Heterostructure ReS2/GaAs Saturable Absorber Passively Q-Switched Nd:YVO4 Laser Nanoscale Research Letters Q-switching lasers Two-dimensional nanomaterials Saturable absorbers |
| title | Heterostructure ReS2/GaAs Saturable Absorber Passively Q-Switched Nd:YVO4 Laser |
| title_full | Heterostructure ReS2/GaAs Saturable Absorber Passively Q-Switched Nd:YVO4 Laser |
| title_fullStr | Heterostructure ReS2/GaAs Saturable Absorber Passively Q-Switched Nd:YVO4 Laser |
| title_full_unstemmed | Heterostructure ReS2/GaAs Saturable Absorber Passively Q-Switched Nd:YVO4 Laser |
| title_short | Heterostructure ReS2/GaAs Saturable Absorber Passively Q-Switched Nd:YVO4 Laser |
| title_sort | heterostructure res2 gaas saturable absorber passively q switched nd yvo4 laser |
| topic | Q-switching lasers Two-dimensional nanomaterials Saturable absorbers |
| url | http://link.springer.com/article/10.1186/s11671-019-2953-7 |
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