Evolution of Scintillation and Electrical Characteristics of AlGaN Double-Response Sensors During Proton Irradiation

Evolution of Scintillation and Electrical Characteristics of AlGaN Double-Response Sensors During Proton Irradiation

Wide bandgap AlGaN is one of the most promising materials for the fabrication of radiation hard, double-response particle detectors for future collider facilities. However, the formation of defects during growth and fabrication of AlGaN-based devices is unavoidable. Furthermore, radiation defects ar...

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Bibliographic Details
Main Authors: Tomas Ceponis, Kazimieras Badokas, Laimonas Deveikis, Jevgenij Pavlov, Vytautas Rumbauskas, Vitalij Kovalevskij, Sandra Stanionyte, Gintautas Tamulaitis, Eugenijus Gaubas
Format: Article
Language:English
Published: MDPI AG 2019-08-01
Series:Sensors
Subjects:
GaN
AlGaN
proton induced luminescence
radiation defects
dosimetry
scintillation characteristics
electrical characteristics
Online Access:https://www.mdpi.com/1424-8220/19/15/3388

Internet

https://www.mdpi.com/1424-8220/19/15/3388

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