HfAlO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> Bilayer Dielectrics for a Field Effect Transistor on a Hydrogen-Terminated Diamond

HfAlO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> Bilayer Dielectrics for a Field Effect Transistor on a Hydrogen-Terminated Diamond

In this work, a hydrogen-terminated (H-terminated) diamond field effect transistor (FET) with HfAlO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> bilayer dielectrics is fabricated and characterized. The HfAlO<sub>x</sub>/Al<sub>2</sub>O<sub>...

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Bibliographic Details
Main Authors: Minghui Zhang, Fang Lin, Wei Wang, Feng Wen, Genqiang Chen, Shi He, Yanfeng Wang, Shuwei Fan, Renan Bu, Hongxing Wang
Format: Article
Language:English
Published: MDPI AG 2022-01-01
Series:Materials
Subjects:
hydrogen-terminated diamond
field effect transistor
HfAlO<sub>x</sub>
Online Access:https://www.mdpi.com/1996-1944/15/2/446

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https://www.mdpi.com/1996-1944/15/2/446

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