Through-Silicon via Device Non-Destructive Defect Evaluation Using Ultra-High-Resolution Acoustic Microscopy System
In this study, an ultra-high-resolution acoustic microscopy system capable of non-destructively evaluating defects that may occur in thin film structures was fabricated. It is an integrated system of the control module, activation module, and data acquisition system, in which an integrated control s...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-01-01
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| Series: | Materials |
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| Online Access: | https://www.mdpi.com/1996-1944/16/2/860 |
| _version_ | 1797439051944427520 |
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| author | Tae Hyeong Kim Dongchan Kang Jeong Nyeon Kim Ik Keun Park |
| author_facet | Tae Hyeong Kim Dongchan Kang Jeong Nyeon Kim Ik Keun Park |
| author_sort | Tae Hyeong Kim |
| collection | DOAJ |
| description | In this study, an ultra-high-resolution acoustic microscopy system capable of non-destructively evaluating defects that may occur in thin film structures was fabricated. It is an integrated system of the control module, activation module, and data acquisition system, in which an integrated control software for controlling each module was developed. The control module includes the mechanical, control, and ultrasonic parts. The activation module was composed of the pulser/receiver, and the data acquisition system included an A/D board. In addition, the integrated control software performs system operation and material measurement and includes an analysis program to analyze the obtained A-Scan signals in various ways. A through-silicon via (TSV) device, which is a semiconductor structure, was prepared to verify the performance of the developed system. The TSV device was analyzed using an ultra-high-resolution acoustic microscope. When the C-Scan images were analyzed, void defects with a size of 20 μm were detected at a depth of approximately 32.5 μm. A similar result could be confirmed when the cross section was measured using focused ion beam (FIB) microscopy. |
| first_indexed | 2024-03-09T11:47:15Z |
| format | Article |
| id | doaj.art-2b5a3e47eca746ec9f1ef9b3fcce1aba |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-09T11:47:15Z |
| publishDate | 2023-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-2b5a3e47eca746ec9f1ef9b3fcce1aba2023-11-30T23:19:14ZengMDPI AGMaterials1996-19442023-01-0116286010.3390/ma16020860Through-Silicon via Device Non-Destructive Defect Evaluation Using Ultra-High-Resolution Acoustic Microscopy SystemTae Hyeong Kim0Dongchan Kang1Jeong Nyeon Kim2Ik Keun Park3Graduate School of Energy and Environment, Seoul National University of Science and Technology, 232 Gongneung-ro, Nowon-gu, Seoul 01811, Republic of KoreaSeoulTech NDT Research Center (SNDT), Seoul National University of Science and Technology, 232 Gongneung-ro, Nowon-gu, Seoul 01811, Republic of KoreaEdward L. Ginzton Laboratory, Stanford University, Stanford, CA 94305, USADepartment of Mechanical and Automotive Engineering, Seoul National University of Science and Technology, 232 Gongneung-ro, Nowon-gu, Seoul 01811, Republic of KoreaIn this study, an ultra-high-resolution acoustic microscopy system capable of non-destructively evaluating defects that may occur in thin film structures was fabricated. It is an integrated system of the control module, activation module, and data acquisition system, in which an integrated control software for controlling each module was developed. The control module includes the mechanical, control, and ultrasonic parts. The activation module was composed of the pulser/receiver, and the data acquisition system included an A/D board. In addition, the integrated control software performs system operation and material measurement and includes an analysis program to analyze the obtained A-Scan signals in various ways. A through-silicon via (TSV) device, which is a semiconductor structure, was prepared to verify the performance of the developed system. The TSV device was analyzed using an ultra-high-resolution acoustic microscope. When the C-Scan images were analyzed, void defects with a size of 20 μm were detected at a depth of approximately 32.5 μm. A similar result could be confirmed when the cross section was measured using focused ion beam (FIB) microscopy.https://www.mdpi.com/1996-1944/16/2/860TSV deviceacoustic microscopy systemsemiconductorinternal defect |
| spellingShingle | Tae Hyeong Kim Dongchan Kang Jeong Nyeon Kim Ik Keun Park Through-Silicon via Device Non-Destructive Defect Evaluation Using Ultra-High-Resolution Acoustic Microscopy System Materials TSV device acoustic microscopy system semiconductor internal defect |
| title | Through-Silicon via Device Non-Destructive Defect Evaluation Using Ultra-High-Resolution Acoustic Microscopy System |
| title_full | Through-Silicon via Device Non-Destructive Defect Evaluation Using Ultra-High-Resolution Acoustic Microscopy System |
| title_fullStr | Through-Silicon via Device Non-Destructive Defect Evaluation Using Ultra-High-Resolution Acoustic Microscopy System |
| title_full_unstemmed | Through-Silicon via Device Non-Destructive Defect Evaluation Using Ultra-High-Resolution Acoustic Microscopy System |
| title_short | Through-Silicon via Device Non-Destructive Defect Evaluation Using Ultra-High-Resolution Acoustic Microscopy System |
| title_sort | through silicon via device non destructive defect evaluation using ultra high resolution acoustic microscopy system |
| topic | TSV device acoustic microscopy system semiconductor internal defect |
| url | https://www.mdpi.com/1996-1944/16/2/860 |
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