Fabrication and characterization of Schottky barrier diodes on rutile TiO2
Schottky barrier diodes (SBDs) were fabricated by depositing Pd, Pt or Ni on single crystal, conductive n -type rutile TiO _2 using e-beam evaporation. As-grown and nominally undoped rutile TiO _2 single crystals are semi-insulating, and were heat-treated in forming gas flow, N _2 flow or H _2 gas t...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2020-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ab9777 |