Device engineering of p-CuAlO2/β-Ga2O3 interface: A staggered-gap band-alignment

Device engineering of p-CuAlO2/β-Ga2O3 interface: A staggered-gap band-alignment

In this work, by controlling the oxygen flow rate (OFR) (from 0% to 30%), we suggest using a p-type copper aluminum oxide (p-CuAlO2) interlayer to enhance the high breakdown and low leakage current for β-Ga2O3-based power device applications. Results of AFM measurements on p-CuAlO2 films performed u...

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Bibliographic Details
Main Authors: Chowdam Venkata Prasad, Madani Labed, Mohammad Tauquir Alam Shamim Shaikh, Ji Young Min, Tan Hoang Vu Nguyen, Wonjin Song, Jang Hyeok Park, Kyong Jae Kim, Sangmo Kim, Sinsu Kyoung, Nouredine Sengouga, You Seung Rim
Format: Article
Language:English
Published: Elsevier 2023-08-01
Series:Materials Today Advances
Subjects:
p-CuAlO2
β-Ga2O3
Heterojunction
On-resistance
Breakdown voltage
Online Access:http://www.sciencedirect.com/science/article/pii/S2590049823000620

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http://www.sciencedirect.com/science/article/pii/S2590049823000620

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