Epitaxial growth of SiGe films by annealing Al–Ge alloyed pastes on Si substrate

Epitaxial growth of SiGe films by annealing Al–Ge alloyed pastes on Si substrate

Abstract A simple, low-cost, and non-vacuum epitaxial growth method to realize large-area semiconductors on crystalline silicon will become the game-changer for various applications. For example, we can expect the disruptive effect on the cost of large-scale III–V multi-junction solar cells if we co...

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Bibliografski detalji
Glavni autori: Keisuke Fukuda, Satoru Miyamoto, Masahiro Nakahara, Shota Suzuki, Marwan Dhamrin, Kensaku Maeda, Kozo Fujiwara, Yukiharu Uraoka, Noritaka Usami
Format: Članak
Jezik:English
Izdano: Nature Portfolio 2022-09-01
Serija:Scientific Reports
Online pristup:https://doi.org/10.1038/s41598-022-19122-7

Internet

https://doi.org/10.1038/s41598-022-19122-7

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