$Strain analysis comparison in complementary and nanosheet field-effect transistor devices: Nanobeam vs Bessel electron diffraction$

Strain analysis comparison in complementary and nanosheet field-effect transistor devices: Nanobeam vs Bessel electron diffraction

Bibliographic Details
Main Authors:	Favia Paola, Veloso Anabela, Eneman Geert, Mehta Ankit Nalin, Zhou Xiuju, Richard Olivier, Geypen Jef, Grieten Eva
Format:	Article
Language:	English
Published:	EDP Sciences 2024-01-01
Series:	BIO Web of Conferences
Subjects:	strain cfet nanosheet-fet nbd bessel
Online Access:	https://www.bio-conferences.org/articles/bioconf/pdf/2024/48/bioconf_emc2024_24025.pdf

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