Photoluminescence Properties of InAs Quantum Dots Overgrown by a Low-Temperature GaAs Layer under Different Arsenic Pressures

Photoluminescence Properties of InAs Quantum Dots Overgrown by a Low-Temperature GaAs Layer under Different Arsenic Pressures

We studied the influence of the arsenic pressure during low-temperature GaAs overgrowth of InAs quantum dots on their optical properties. In the photoluminescence spectrum of quantum dots overgrown at a high arsenic pressure, we observed a single broad line corresponding to unimodal size distributio...

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Bibliographic Details
Main Authors: Sergey Balakirev, Natalia Chernenko, Natalia Kryzhanovskaya, Nikita Shandyba, Danil Kirichenko, Anna Dragunova, Sergey Komarov, Alexey Zhukov, Maxim Solodovnik
Format: Article
Language:English
Published: MDPI AG 2022-12-01
Series:Electronics
Subjects:
molecular beam epitaxy
A3B5
semiconductor nanostructures
quantum dots
photoluminescence
Online Access:https://www.mdpi.com/2079-9292/11/23/4062

Internet

https://www.mdpi.com/2079-9292/11/23/4062

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