Photoluminescence Properties of InAs Quantum Dots Overgrown by a Low-Temperature GaAs Layer under Different Arsenic Pressures
We studied the influence of the arsenic pressure during low-temperature GaAs overgrowth of InAs quantum dots on their optical properties. In the photoluminescence spectrum of quantum dots overgrown at a high arsenic pressure, we observed a single broad line corresponding to unimodal size distributio...
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MDPI AG
2022-12-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/11/23/4062 |
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| author | Sergey Balakirev Natalia Chernenko Natalia Kryzhanovskaya Nikita Shandyba Danil Kirichenko Anna Dragunova Sergey Komarov Alexey Zhukov Maxim Solodovnik |
| author_facet | Sergey Balakirev Natalia Chernenko Natalia Kryzhanovskaya Nikita Shandyba Danil Kirichenko Anna Dragunova Sergey Komarov Alexey Zhukov Maxim Solodovnik |
| author_sort | Sergey Balakirev |
| collection | DOAJ |
| description | We studied the influence of the arsenic pressure during low-temperature GaAs overgrowth of InAs quantum dots on their optical properties. In the photoluminescence spectrum of quantum dots overgrown at a high arsenic pressure, we observed a single broad line corresponding to unimodal size distribution of quantum dots. Meanwhile, two distinct peaks (~1080 and ~1150 nm) at larger wavelengths are found in the spectra of samples with quantum dots overgrown at a low arsenic pressure. We attributed this phenomenon to the high-pressure suppression of atom diffusion between InAs islands at the overgrowth stage, which makes it possible to preserve the initial unimodal size distribution of quantum dots. The same overgrowth of quantum dots at the low arsenic pressure induces intensive mass transfer, which leads to the formation of arrays of quantum dots with larger sizes. Integrated photoluminescence intensity at 300 K is found to be lower for quantum dots overgrown at the higher arsenic pressure. However, a difference in the photoluminescence intensity for the high- and low-pressure overgrowths is not so significant for a temperature of 77 K. This indicates that excess arsenic incorporates into the capping layer at high arsenic pressures and creates numerous nonradiative recombination centers, diminishing the photoluminescence intensity. |
| first_indexed | 2024-03-09T17:49:09Z |
| format | Article |
| id | doaj.art-2bb49880b6be4fd982a6072477f10c79 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-09T17:49:09Z |
| publishDate | 2022-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-2bb49880b6be4fd982a6072477f10c792023-11-24T10:50:00ZengMDPI AGElectronics2079-92922022-12-011123406210.3390/electronics11234062Photoluminescence Properties of InAs Quantum Dots Overgrown by a Low-Temperature GaAs Layer under Different Arsenic PressuresSergey Balakirev0Natalia Chernenko1Natalia Kryzhanovskaya2Nikita Shandyba3Danil Kirichenko4Anna Dragunova5Sergey Komarov6Alexey Zhukov7Maxim Solodovnik8Institute of Nanotechnologies, Electronics and Equipment Engineering, Southern Federal University, 347922 Taganrog, RussiaInstitute of Nanotechnologies, Electronics and Equipment Engineering, Southern Federal University, 347922 Taganrog, RussiaInternational Laboratory of Quantum Optoelectronics, HSE University, 190008 St. Petersburg, RussiaInstitute of Nanotechnologies, Electronics and Equipment Engineering, Southern Federal University, 347922 Taganrog, RussiaInstitute of Nanotechnologies, Electronics and Equipment Engineering, Southern Federal University, 347922 Taganrog, RussiaInternational Laboratory of Quantum Optoelectronics, HSE University, 190008 St. Petersburg, RussiaInternational Laboratory of Quantum Optoelectronics, HSE University, 190008 St. Petersburg, RussiaInternational Laboratory of Quantum Optoelectronics, HSE University, 190008 St. Petersburg, RussiaInstitute of Nanotechnologies, Electronics and Equipment Engineering, Southern Federal University, 347922 Taganrog, RussiaWe studied the influence of the arsenic pressure during low-temperature GaAs overgrowth of InAs quantum dots on their optical properties. In the photoluminescence spectrum of quantum dots overgrown at a high arsenic pressure, we observed a single broad line corresponding to unimodal size distribution of quantum dots. Meanwhile, two distinct peaks (~1080 and ~1150 nm) at larger wavelengths are found in the spectra of samples with quantum dots overgrown at a low arsenic pressure. We attributed this phenomenon to the high-pressure suppression of atom diffusion between InAs islands at the overgrowth stage, which makes it possible to preserve the initial unimodal size distribution of quantum dots. The same overgrowth of quantum dots at the low arsenic pressure induces intensive mass transfer, which leads to the formation of arrays of quantum dots with larger sizes. Integrated photoluminescence intensity at 300 K is found to be lower for quantum dots overgrown at the higher arsenic pressure. However, a difference in the photoluminescence intensity for the high- and low-pressure overgrowths is not so significant for a temperature of 77 K. This indicates that excess arsenic incorporates into the capping layer at high arsenic pressures and creates numerous nonradiative recombination centers, diminishing the photoluminescence intensity.https://www.mdpi.com/2079-9292/11/23/4062molecular beam epitaxyA3B5semiconductor nanostructuresquantum dotsphotoluminescence |
| spellingShingle | Sergey Balakirev Natalia Chernenko Natalia Kryzhanovskaya Nikita Shandyba Danil Kirichenko Anna Dragunova Sergey Komarov Alexey Zhukov Maxim Solodovnik Photoluminescence Properties of InAs Quantum Dots Overgrown by a Low-Temperature GaAs Layer under Different Arsenic Pressures Electronics molecular beam epitaxy A3B5 semiconductor nanostructures quantum dots photoluminescence |
| title | Photoluminescence Properties of InAs Quantum Dots Overgrown by a Low-Temperature GaAs Layer under Different Arsenic Pressures |
| title_full | Photoluminescence Properties of InAs Quantum Dots Overgrown by a Low-Temperature GaAs Layer under Different Arsenic Pressures |
| title_fullStr | Photoluminescence Properties of InAs Quantum Dots Overgrown by a Low-Temperature GaAs Layer under Different Arsenic Pressures |
| title_full_unstemmed | Photoluminescence Properties of InAs Quantum Dots Overgrown by a Low-Temperature GaAs Layer under Different Arsenic Pressures |
| title_short | Photoluminescence Properties of InAs Quantum Dots Overgrown by a Low-Temperature GaAs Layer under Different Arsenic Pressures |
| title_sort | photoluminescence properties of inas quantum dots overgrown by a low temperature gaas layer under different arsenic pressures |
| topic | molecular beam epitaxy A3B5 semiconductor nanostructures quantum dots photoluminescence |
| url | https://www.mdpi.com/2079-9292/11/23/4062 |
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