High Power 190 GHz Frequency Doubler Based On GaAs Schottky Diode

High Power 190 GHz Frequency Doubler Based On GaAs Schottky Diode

The research on high power 190 GHz doubler based on the GaAs Schottky diodes is proposed in this paper. The frequency doubler comprises a improved diode configuration that increases the number of anodes by changing the diode arrangement to improve power handling capacity. Electromagnetic and thermal...

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Bibliographic Details
Main Authors: Nan Wu, Zhi Jin, Jingtao Zhou, Haomiao Wei, Zhicheng Liu, Jianming Lin
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Thz
Schottky diodes
frequency doubler
GaAs
high power
Online Access:https://ieeexplore.ieee.org/document/10663496/

Internet

https://ieeexplore.ieee.org/document/10663496/

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