Robust Bidirectional Gate Driver on Array Based on Indium Gallium Zinc Oxide Thin-Film Transistor for In-Cell Touch Displays

Robust Bidirectional Gate Driver on Array Based on Indium Gallium Zinc Oxide Thin-Film Transistor for In-Cell Touch Displays

In this paper, we propose a bidirectional gate driver on array (GOA) circuit design based on indium gallium zinc oxide (IGZO) thin-film transistor (TFT) to support time-division driving method (TDDM) for in-cell touch displays. The proposed circuit allows the touch panel to pause the display for tou...

Full description

Bibliographic Details
Main Authors: Liufei Zhou, Fuchao He, Xiaojun Guo, Haihong Wang, Mingxin Wang, Yuning Zhang, Baoping Wang
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
In-cell touch
indium gallium zinc oxide
thin-film transistor
gate driver on array
threshold voltage
Online Access:https://ieeexplore.ieee.org/document/10559899/

Internet

https://ieeexplore.ieee.org/document/10559899/

Similar Items