Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes
Abstract InGaN/GaN micro-light-emitting diodes (micro-LEDs) with a metal–insulator-semiconductor (MIS) structure on the sidewall are proposed to improve efficiency. In this MIS structure, a sidewall electrode is deposited on the insulating layer-coated sidewall of the device mesa between a cathode o...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Springer & Higher Education Press
2024-03-01
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| Series: | Frontiers of Optoelectronics |
| Subjects: | |
| Online Access: | https://doi.org/10.1007/s12200-024-00111-9 |