Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes
Abstract InGaN/GaN micro-light-emitting diodes (micro-LEDs) with a metal–insulator-semiconductor (MIS) structure on the sidewall are proposed to improve efficiency. In this MIS structure, a sidewall electrode is deposited on the insulating layer-coated sidewall of the device mesa between a cathode o...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Springer & Higher Education Press
2024-03-01
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| Series: | Frontiers of Optoelectronics |
| Subjects: | |
| Online Access: | https://doi.org/10.1007/s12200-024-00111-9 |
| _version_ | 1797209542832947200 |
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| author | Jian Yin David Hwang Hossein Zamani Siboni Ehsanollah Fathi Reza Chaji Dayan Ban |
| author_facet | Jian Yin David Hwang Hossein Zamani Siboni Ehsanollah Fathi Reza Chaji Dayan Ban |
| author_sort | Jian Yin |
| collection | DOAJ |
| description | Abstract InGaN/GaN micro-light-emitting diodes (micro-LEDs) with a metal–insulator-semiconductor (MIS) structure on the sidewall are proposed to improve efficiency. In this MIS structure, a sidewall electrode is deposited on the insulating layer-coated sidewall of the device mesa between a cathode on the bottom and an anode on the top. Electroluminescence (EL) measurements of fabricated devices with a mesa diameter of 10 μm show that the application of negative biases on the sidewall electrode can increase the device external quantum efficiency (EQE). In contrast, the application of positive biases can decrease the EQE. The band structure analysis reveals that the EQE is impacted because the application of sidewall electric fields manipulates the local surface electron density along the mesa sidewall and thus controls surface Shockley–Read–Hall (SRH) recombination. Two suggested strategies, reducing insulator layer thickness and exploring alternative materials, can be implemented to further improve the EQE of MIS micro-LEDs in future fabrication. Graphical Abstract |
| first_indexed | 2024-04-24T09:56:22Z |
| format | Article |
| id | doaj.art-2c69f9b1afa64cbc9ec2133c565754f3 |
| institution | Directory Open Access Journal |
| issn | 2095-2767 |
| language | English |
| last_indexed | 2024-04-24T09:56:22Z |
| publishDate | 2024-03-01 |
| publisher | Springer & Higher Education Press |
| record_format | Article |
| series | Frontiers of Optoelectronics |
| spelling | doaj.art-2c69f9b1afa64cbc9ec2133c565754f32024-04-14T11:07:54ZengSpringer & Higher Education PressFrontiers of Optoelectronics2095-27672024-03-011711810.1007/s12200-024-00111-9Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodesJian Yin0David Hwang1Hossein Zamani Siboni2Ehsanollah Fathi3Reza Chaji4Dayan Ban5Department of Electrical and Computer Engineering, Waterloo Institute Nanotechnology, University of WaterlooVuereal InC.Vuereal InC.Vuereal InC.Vuereal InC.Department of Electrical and Computer Engineering, Waterloo Institute Nanotechnology, University of WaterlooAbstract InGaN/GaN micro-light-emitting diodes (micro-LEDs) with a metal–insulator-semiconductor (MIS) structure on the sidewall are proposed to improve efficiency. In this MIS structure, a sidewall electrode is deposited on the insulating layer-coated sidewall of the device mesa between a cathode on the bottom and an anode on the top. Electroluminescence (EL) measurements of fabricated devices with a mesa diameter of 10 μm show that the application of negative biases on the sidewall electrode can increase the device external quantum efficiency (EQE). In contrast, the application of positive biases can decrease the EQE. The band structure analysis reveals that the EQE is impacted because the application of sidewall electric fields manipulates the local surface electron density along the mesa sidewall and thus controls surface Shockley–Read–Hall (SRH) recombination. Two suggested strategies, reducing insulator layer thickness and exploring alternative materials, can be implemented to further improve the EQE of MIS micro-LEDs in future fabrication. Graphical Abstracthttps://doi.org/10.1007/s12200-024-00111-9Micro-LEDGaNEQE improvementMicro-fabrication |
| spellingShingle | Jian Yin David Hwang Hossein Zamani Siboni Ehsanollah Fathi Reza Chaji Dayan Ban Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes Frontiers of Optoelectronics Micro-LED GaN EQE improvement Micro-fabrication |
| title | Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes |
| title_full | Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes |
| title_fullStr | Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes |
| title_full_unstemmed | Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes |
| title_short | Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes |
| title_sort | efficiency improvement by using metal insulator semiconductor structure in ingan gan micro light emitting diodes |
| topic | Micro-LED GaN EQE improvement Micro-fabrication |
| url | https://doi.org/10.1007/s12200-024-00111-9 |
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