Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes

Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes

Abstract InGaN/GaN micro-light-emitting diodes (micro-LEDs) with a metal–insulator-semiconductor (MIS) structure on the sidewall are proposed to improve efficiency. In this MIS structure, a sidewall electrode is deposited on the insulating layer-coated sidewall of the device mesa between a cathode o...

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Bibliographic Details
Main Authors: Jian Yin, David Hwang, Hossein Zamani Siboni, Ehsanollah Fathi, Reza Chaji, Dayan Ban
Format: Article
Language:English
Published: Springer & Higher Education Press 2024-03-01
Series:Frontiers of Optoelectronics
Subjects:
Micro-LED
GaN
EQE improvement
Micro-fabrication
Online Access:https://doi.org/10.1007/s12200-024-00111-9

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