Automotive 2.1 μm Full-Depth Deep Trench Isolation CMOS Image Sensor with a 120 dB Single-Exposure Dynamic Range

Automotive 2.1 μm Full-Depth Deep Trench Isolation CMOS Image Sensor with a 120 dB Single-Exposure Dynamic Range

An automotive 2.1 μm CMOS image sensor has been developed with a full-depth deep trench isolation and an advanced readout circuit technology. To achieve a high dynamic range, we employ a sub-pixel structure featuring a high conversion gain of a large photodiode and a lateral overflow of a small phot...

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Bibliographic Details
Main Authors: Dongsuk Yoo, Youngtae Jang, Youngchan Kim, Jihun Shin, Kangsun Lee, Seok-Yong Park, Seungho Shin, Hongsuk Lee, Seojoo Kim, Joongseok Park, Cheonho Park, Moosup Lim, Hyungjin Bae, Soeun Park, Minwook Jung, Sungkwan Kim, Shinyeol Choi, Sejun Kim, Jinkyeong Heo, Hojoon Lee, KyungChoon Lee, Youngkyun Jeong, Youngsun Oh, Min-Sun Keel, Bumsuk Kim, Haechang Lee, JungChak Ahn
Format: Article
Language:English
Published: MDPI AG 2023-11-01
Series:Sensors
Subjects:
automotive
HDR
LFM
sub-pixel structure
F-DTI
Online Access:https://www.mdpi.com/1424-8220/23/22/9150

Internet

https://www.mdpi.com/1424-8220/23/22/9150

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