Scaling properties of ballistic nano-transistors
<p>Abstract</p> <p>Recently, we have suggested a scale-invariant model for a nano-transistor. In agreement with experiments a close-to-linear thresh-old trace was found in the calculated <it>I</it> <sub>D </sub>- <it>V</it> <sub>D</sub&g...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2011-01-01
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| Series: | Nanoscale Research Letters |
| Online Access: | http://www.nanoscalereslett.com/content/6/1/365 |