Photovoltaic performance of lattice-matched gallium indium arsenide/germanium stannide dual-junction cell

Based on the photovoltaic properties and tandem solar cells theory, Gallium Indium Arsenide/Germanium Stannide (GaInAs/GeSn)-based double-junction (DJ) solar cells have been numerically simulated for the first time. In this study, we explore the band gap combination under lattice matching and obtain...

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Bibliographic Details
Main Authors: Tianjing Yu, Min Cui, Qianying Li, Jinxiang Deng, Hongli Gao, Anjuan Yuan
Format: Article
Language:English
Published: IOP Publishing 2023-01-01
Series:Materials Research Express
Subjects:
Online Access:https://doi.org/10.1088/2053-1591/acde49