High Performance MRAM with Spin-Transfer-Torque and Voltage-Controlled Magnetic Anisotropy Effects

High Performance MRAM with Spin-Transfer-Torque and Voltage-Controlled Magnetic Anisotropy Effects

The Internet of Things (IoTs) relies on efficient node memories to process data among sensors, cloud and RF front-end. Both mainstream and emerging memories have been developed to achieve this energy efficiency target. Spin transfer torque magnetic tunnel junction (STT-MTJ)-based nonvolatile memory...

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Bibliographic Details
Main Authors: Hao Cai, Wang Kang, You Wang, Lirida Alves De Barros Naviner, Jun Yang, Weisheng Zhao
Format: Article
Language:English
Published: MDPI AG 2017-09-01
Series:Applied Sciences
Subjects:
STT-MRAM
VCMA-MRAM
ultra-low power
reliability
Online Access:https://www.mdpi.com/2076-3417/7/9/929

Internet

https://www.mdpi.com/2076-3417/7/9/929

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