Solution-processed zirconium acetylacetonate charge-trap layer for multi-bit nonvolatile thin-film memory transistors

Solution-processed zirconium acetylacetonate charge-trap layer for multi-bit nonvolatile thin-film memory transistors

ABSTRACTThe charge trap property of solution-processed zirconium acetylacetonate (ZAA) for solution-processed nonvolatile charge-trap memory (CTM) transistors is demonstrated. Increasing the annealing temperature of the ZAA from room temperature (RT) to 300°C in ambient, the carbon double bonds with...

Full description

Bibliographic Details
Main Authors: Song Lee, Jeong-In Lee, Chang-Hyun Kim, Jin-Hyuk Kwon, Jonghee Lee, Amos Amoako Boampong, Min-Hoi Kim
Format: Article
Language:English
Published: Taylor & Francis Group 2023-12-01
Series:Science and Technology of Advanced Materials
Subjects:
Zirconium acetylacetonates
solution-processes
charge-trap layers
thin-film memory transistors
multi-bits
Online Access:https://www.tandfonline.com/doi/10.1080/14686996.2023.2212112

Internet

https://www.tandfonline.com/doi/10.1080/14686996.2023.2212112

Similar Items