Formation of a Thin Continuous GaSb Film on Si(001) by Solid Phase Epitaxy

Formation of a Thin Continuous GaSb Film on Si(001) by Solid Phase Epitaxy

Nanocrystalline GaSb films were grown on Si(001) from the stoichiometric Ga⁻Sb mixture using solid-phase epitaxy at temperatures of 200⁻500 °C. Use of the solid-phase epitaxy method allowed the suppression of Ga surface diffusion and prevention of intense Sb desorption....

Deskribapen osoa

Xehetasun bibliografikoak
Egile Nagusiak: Evgeniy Chusovitin, Sergey Dotsenko, Svetlana Chusovitina, Dmitry Goroshko, Anton Gutakovskii, Evgeniy Subbotin, Konstantin Galkin, Nikolay Galkin
Formatua: Artikulua
Hizkuntza:English
Argitaratua: MDPI AG 2018-11-01
Saila:Nanomaterials
Gaiak:
solid phase epitaxy
crystal structure
epitaxial relationships
GaSb
Si(001)
Sarrera elektronikoa:https://www.mdpi.com/2079-4991/8/12/987

Internet

https://www.mdpi.com/2079-4991/8/12/987

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