Growth and Structural Characterization of <i>h</i>-LuMnO<sub>3</sub> Thin Films Deposited by Direct MOCVD

Growth and Structural Characterization of <i>h</i>-LuMnO<sub>3</sub> Thin Films Deposited by Direct MOCVD

In this work, we investigated the MOCVD conditions to synthesize thin films with the hexagonal <i>P6<sub>3</sub>cm h</i>-LuMnO<sub>3</sub> phase as a potential low-band gap ferroelectric material. The main parameters investigated were the ratio of organometallic s...

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Bibliographic Details
Main Authors: Abderrazzak Ait Bassou, Lisete Fernandes, José R. Fernandes, Fábio G. Figueiras, Pedro B. Tavares
Format: Article
Language:English
Published: MDPI AG 2023-12-01
Series:Materials
Subjects:
oxides
thin films
MOCVD
photo-ferroelectrics
narrow band gap
Online Access:https://www.mdpi.com/1996-1944/17/1/211

Internet

https://www.mdpi.com/1996-1944/17/1/211

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