Growth and Structural Characterization of <i>h</i>-LuMnO<sub>3</sub> Thin Films Deposited by Direct MOCVD
In this work, we investigated the MOCVD conditions to synthesize thin films with the hexagonal <i>P6<sub>3</sub>cm h</i>-LuMnO<sub>3</sub> phase as a potential low-band gap ferroelectric material. The main parameters investigated were the ratio of organometallic s...
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MDPI AG
2023-12-01
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| Online Access: | https://www.mdpi.com/1996-1944/17/1/211 |
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| author | Abderrazzak Ait Bassou Lisete Fernandes José R. Fernandes Fábio G. Figueiras Pedro B. Tavares |
| author_facet | Abderrazzak Ait Bassou Lisete Fernandes José R. Fernandes Fábio G. Figueiras Pedro B. Tavares |
| author_sort | Abderrazzak Ait Bassou |
| collection | DOAJ |
| description | In this work, we investigated the MOCVD conditions to synthesize thin films with the hexagonal <i>P6<sub>3</sub>cm h</i>-LuMnO<sub>3</sub> phase as a potential low-band gap ferroelectric material. The main parameters investigated were the ratio of organometallic starting materials, substrate temperature, and annealing effect. Two different substrates were used in the study: fused silica (SiO<sub>2</sub>) glass and platinized silicon (Pt\Ti\SiO<sub>2</sub>\Si(100)). In order to investigate the thermodynamic stability and quality of the developed phases, a detailed analysis of the crystal structure, microstructure, morphology, and roughness of the films was performed by X-ray diffractometer, scanning electron microscopy (SEM), energy dispersive spectrometry (EDS), Raman spectroscopy, and piezoelectric force microscopy (PFM). Molar compositions in the film within 0.93 < |Lu|/|Mn| < 1.33 were found to be suitable for obtaining a single-phase <i>h</i>-LuMnO<sub>3</sub>. The best films were obtained by depositions at 700 °C, followed by thermal treatments at 800 °C for long periods of up to 12 h. These films exhibited a highly crystalline hexagonal single phase with a relatively narrow direct band gap, around 1.5 eV, which is within the expected values for the <i>h</i>-LuMnO<sub>3</sub> system. |
| first_indexed | 2024-03-08T15:02:10Z |
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| id | doaj.art-2cfc0e5739ac4fac936043ef912741e1 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-08T15:02:10Z |
| publishDate | 2023-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-2cfc0e5739ac4fac936043ef912741e12024-01-10T15:02:59ZengMDPI AGMaterials1996-19442023-12-0117121110.3390/ma17010211Growth and Structural Characterization of <i>h</i>-LuMnO<sub>3</sub> Thin Films Deposited by Direct MOCVDAbderrazzak Ait Bassou0Lisete Fernandes1José R. Fernandes2Fábio G. Figueiras3Pedro B. Tavares4Centro de Química-Vila Real (CQVR), Departamento Física, Escola de Ciências e Tecnologia (ECT), Universidade de Trás-os-Montes e Alto Douro, 5000-801 Vila Real, PortugalCentro de Química-Vila Real (CQVR), Unidade de Microscopia Eletrónica-Centro de Investigaçãoe Desenvolvimento (UME/CIDE), Universidade de Trás-os-Montes e Alto Douro, 5000-801 Vila Real, PortugalCentro de Química-Vila Real (CQVR), Departamento Física, Escola de Ciências e Tecnologia (ECT), Universidade de Trás-os-Montes e Alto Douro, 5000-801 Vila Real, PortugalInstituto de Física de Materiais Avançados, Nanotecnologia e Fotónica (IFIMUP), Departamento Física e Astronomia, Faculdade Ciências, Universidade Porto, 687, 4169-007 Porto, PortugalCentro de Química-Vila Real (CQVR), Departamento Química, Escola de Ciências da Vida e do Ambiente (ECVA), Universidade de Trás-os-Montes e Alto Douro, 5000-801 Vila Real, PortugalIn this work, we investigated the MOCVD conditions to synthesize thin films with the hexagonal <i>P6<sub>3</sub>cm h</i>-LuMnO<sub>3</sub> phase as a potential low-band gap ferroelectric material. The main parameters investigated were the ratio of organometallic starting materials, substrate temperature, and annealing effect. Two different substrates were used in the study: fused silica (SiO<sub>2</sub>) glass and platinized silicon (Pt\Ti\SiO<sub>2</sub>\Si(100)). In order to investigate the thermodynamic stability and quality of the developed phases, a detailed analysis of the crystal structure, microstructure, morphology, and roughness of the films was performed by X-ray diffractometer, scanning electron microscopy (SEM), energy dispersive spectrometry (EDS), Raman spectroscopy, and piezoelectric force microscopy (PFM). Molar compositions in the film within 0.93 < |Lu|/|Mn| < 1.33 were found to be suitable for obtaining a single-phase <i>h</i>-LuMnO<sub>3</sub>. The best films were obtained by depositions at 700 °C, followed by thermal treatments at 800 °C for long periods of up to 12 h. These films exhibited a highly crystalline hexagonal single phase with a relatively narrow direct band gap, around 1.5 eV, which is within the expected values for the <i>h</i>-LuMnO<sub>3</sub> system.https://www.mdpi.com/1996-1944/17/1/211oxidesthin filmsMOCVDphoto-ferroelectricsnarrow band gap |
| spellingShingle | Abderrazzak Ait Bassou Lisete Fernandes José R. Fernandes Fábio G. Figueiras Pedro B. Tavares Growth and Structural Characterization of <i>h</i>-LuMnO<sub>3</sub> Thin Films Deposited by Direct MOCVD Materials oxides thin films MOCVD photo-ferroelectrics narrow band gap |
| title | Growth and Structural Characterization of <i>h</i>-LuMnO<sub>3</sub> Thin Films Deposited by Direct MOCVD |
| title_full | Growth and Structural Characterization of <i>h</i>-LuMnO<sub>3</sub> Thin Films Deposited by Direct MOCVD |
| title_fullStr | Growth and Structural Characterization of <i>h</i>-LuMnO<sub>3</sub> Thin Films Deposited by Direct MOCVD |
| title_full_unstemmed | Growth and Structural Characterization of <i>h</i>-LuMnO<sub>3</sub> Thin Films Deposited by Direct MOCVD |
| title_short | Growth and Structural Characterization of <i>h</i>-LuMnO<sub>3</sub> Thin Films Deposited by Direct MOCVD |
| title_sort | growth and structural characterization of i h i lumno sub 3 sub thin films deposited by direct mocvd |
| topic | oxides thin films MOCVD photo-ferroelectrics narrow band gap |
| url | https://www.mdpi.com/1996-1944/17/1/211 |
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