Two-Path 77-GHz PA in 28-nm FD-SOI CMOS for Automotive Radar Applications
This paper presents a 77 GHz two path power amplifier (PA) for automotive radar applications. It was fabricated in 28-nm fully depleted silicon-on-insulator CMOS technology, which provides transistors with a transition frequency of about 270 GHz and a general-purpose low cost back-end-of-line. The p...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-04-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/11/8/1289 |