The influence of tunnel effect on the current injection of spin light-emitting diodes with InGaAs/GaAs quantum wells
By using current-voltage characteristic and electro-photo luminescence measurements, the efficiency of spin electronic injection was investigated in the Co/Al_2 O_3 tunnel barrier/GaAs based structure, where spin current was generated by electric injection from FM to GaAs through the tunnel barrier....
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| Format: | Article |
| Language: | English |
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Povolzhskiy State University of Telecommunications & Informatics
2015-02-01
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| Series: | Физика волновых процессов и радиотехнические системы |
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| Online Access: | https://journals.ssau.ru/pwp/article/viewFile/7319/7178 |