Improved Electrical Characteristics of Gallium Oxide/P-Epi Silicon Carbide Static Induction Transistors with UV/Ozone Treatment Fabricated by RF Sputter

Improved Electrical Characteristics of Gallium Oxide/P-Epi Silicon Carbide Static Induction Transistors with UV/Ozone Treatment Fabricated by RF Sputter

In this study, static induction transistors (SITs) with beta gallium oxide (β-Ga<sub>2</sub>O<sub>3</sub>) channels are grown on a p-epi silicon carbide (SiC) layer via radio frequency sputtering. The Ga<sub>2</sub>O<sub>3</sub> films are subjected to...

Full description

Bibliographic Details
Main Authors: Myeong-Cheol Shin, Young-Jae Lee, Dong-Hyeon Kim, Seung-Woo Jung, Michael A. Schweitz, Weon Ho Shin, Jong-Min Oh, Chulhwan Park, Sang-Mo Koo
Format: Article
Language:English
Published: MDPI AG 2021-03-01
Series:Materials
Subjects:
gallium oxide
silicon carbide
static induction transistor
UV/ozone treatment
Online Access:https://www.mdpi.com/1996-1944/14/5/1296

Internet

https://www.mdpi.com/1996-1944/14/5/1296

Similar Items